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Technology |
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CL180G BCD MOSFET
CL180GBCD, a Bipolar-CMOS-DMOS (BCD) technology is built with 0.18um CMOS for high performance power management applications. The technology features high gate density logic integrated with high performance, low Rds On LDMOS device. Various passive components is supported to enable Power Management SoC design optimized for performance, power and die size. Moreover, the technology is supported by proven Foundry design kit.
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| CL180G
BCD MOSFET Key Process Features |
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Single-poly and up to six metal layers |
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Dual gate: 1.8V core and 3.3V I/O
or 5.0 V I/O |
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LDMOS device: 20V ( 40V and 60V in plan ) |
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Bipolar device: NPN/PNP |
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Cobalt silicided source, drain and gate |
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Shallow trench isolation |
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Aluminum metallization with tungsten plug |
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FSG inter-metal dielectric |
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Option: Metal-Insulator-Metal, High Poly Res, Ultra Top Metal,
Zener, Schottky Diode |
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SRAM bit cell: 4.65µm2 |
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