CL130G SilTerra’s CL130G technology (0.13um CMOS Logic Generic) is process matched to leading foundry. The all-copper process features borderless contacts and vias and up to eight layers of metal. This technology offers high speed and high gate density performance which is suitable for design in high speed digital consumer, wired communication and computation related applications.    Our CL130HVt technology (0.13um CMOS Logic High Vt) features the optimum transistor performance between speed and standby power. This process technology targets high speed portable devices.   Both CL130G and CL130HVt technologies are supported by silicon verified standard design libraries, SRAM compilers, I.O. Libraries and IPs.

 

CL130G Key Process Features Industry standard 0.13µm CMOS logic technology Multiple voltages: 1.2V core, 2.5V/3.3V I/O Single-poly, up to eight metal layers FSG inter-metal dielectric High Vt option available Dual damascene copper metalization RO delay: 20ps/stage (Nominal Vt) Gate density: 230KG/mm2 SRAM cell: 2.43µm2 and 2.14µm2

Physical Design Rule

Electrical Design Rule (Specification)