CL130MR   Silterra’s CL130MR (0.13um RFCMOS) is developed specifically for wireless applications in WLAN a/b/g,Bluetooth, RF transceiver & tuners. Many RF circuits are already proven in our RFCMOS technology. This technology is supported with complete RF models and RF design kits that are silicon proven.

 

CL130MR Key Process Features Single poly up to eight metal layers Supports 1.2V core, 2.5V and 3.3V I/O power supplies Support RF Finger Capacitors Twin retrograde wells Cobalt silicided source, drain and gate Dual damascene copper metalization with FSG Native Vt options Deep-Nwell option 1K Ohm Poly resistor option Ultra thick top metal 3.2µm copper inductor option Metal Finger and MIM Capacitor option

CL130MR Device Performance MS/RF Devices Unit 1.2V (Typical) 2.5V (Typical) 3.3V (Typical) NMOS fT GHz 81 36 25 PMOS fT GHz 40 22 16 NMOS 1/f noise V2/Hz 5E-17 @ 1KHz, Vg= Vd=0.65V     PMOS 1/f noise V2/Hz 1E-18 @ 1KHz, Vg=Vd=0.65V         Target Spec Inductor Thickness µm 3.2 Inductor Qmax @ 4.8nH   12-15 Mim Cap. fF/µm2 1.0, 1.5 or 2.0 Metal finger  Cap. fF/µm2 2.0 Pn Varactor  Cmax fF/µm2 1.4 1.2V MOS Varactor  Cmax fF/µm2 16.0 N+ Diffusion Resistor Ohm/sq 69 P+ Diffusion resistor Ohm/sq 136 High Poly Resistor Ohm/sq 1050 DNwell Ohm/sq 520