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| CL180G5 Key Process Features |
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Single-poly and up to six metal layers |
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Dual gate: 1.8V core and 5.0V |
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Cobalt silicided source, drain and gate |
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Steep retrograde twin well |
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29.5A/115A Dual gate Oxide |
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Shallow trench isolation |
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Aluminum metallization with tungsten plug |
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FSG inter-metal dielectric |
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Metal-Insulator-Metal (MIM) Capacitor (Option) |
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SRAM cell: 4.65 µm2 |