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High Voltage

CL180H5

Silterra’s innovative CL180H5 (0.18um High Voltage) technology is developed to meet the high voltage module specifically target in small/medium one chip display driver. Our High Voltage technology is able to support high memory density requirement with low leakage current. This technology is supported by complete standard cell library, configurable SRAM macro block, I/O and One-Time-Programmable IP.
 
CL180H5 Key Process Features 
   Single poly, up to six metal layers
   Supports 1.8V and 3.3/5V power supplies
   Shallow trench isolation 
   Retrograde wells
   Dual gate oxide
   Surface channel NMOS and PMOS 
   Cobalt silicided source, drain and gate
   Aluminum metallization with tungsten plug
   High density plasma gap fill
   BN+ and MiM capacitors (optional)
   High density SRAM bitcell


Physical Design Rule



Electrical Design Rule (Specification) 

   
 
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