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| CL180H5
Key Process Features |
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|
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Single poly, up to
six metal layers |
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Supports 1.8V and
3.3/5V power supplies |
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Shallow trench isolation |
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Retrograde wells |
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Dual
gate oxide |
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Surface channel NMOS and PMOS |
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Cobalt silicided source, drain and gate |
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Aluminum metallization with tungsten plug |
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High density plasma gap fill |
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BN+ and MiM capacitors (optional) |
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High density SRAM bitcell |