CL180MR   Silterra’s CL180MR (0.18um RFCMOS) is developed specifically for wireless applications in WLAN a/b/g,Bluetooth, RF transceiver & tuners. Many RF circuits and models already proven in our RFCMOS technology. This technology is supported a complete RF models and RF design kits with silicon proven.

 

CL180MR Key Process Features Single poly, up to six metal layers Supports 1.8V and 3.3V power supplies Shallow trench isolation  Dual gate oxide Surface channel NMOS and PMOS  Cobalt silicided source, drain and gate Borderless contact and vias High density plasma gap fill FSG inter-metal dielectric Native transistors Metal-Insulator-Metal Capacitor ( 1fF/µm2 or 2fF/µm2 ) Thick metal spiral inductor Varactor Metal Finger Capacitor ( 1.30 fF/µm2 ) Thick Metal Spiral Inductor ( 2.3µm  ) Ft NMOS  ( 56.2 GHz )

Physical Design Rule

Electrical Design Rule (Specification)