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| CL180MR
Key Process Features |
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Single-poly and up to six metal layers |
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Supports 1.8V and 3.3V power supplies |
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Shallow trench isolation |
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Dual gate oxide |
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Surface channel NMOS and PMOS |
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Cobalt silicided source, drain and gate |
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Borderless contact and vias |
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High density plasma gap fill |
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FSG inter-metal dielectric |
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Native transistors |
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Metal-Insulator-Metal Capacitor ( 1fF/µm2 or 2fF/µm2 ) |
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Thick metal spiral inductor |
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Varactor Metal Finger Capacitor ( 1.30
fF/µm2 ) |
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Thick Metal Spiral Inductor ( 2.3µm ) |
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Ft NMOS ( 56.2 GHz ) |
