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| High Voltage |
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CL200H32
Our high yielding CL200H32 ( 0.20um High Voltage ) technology is specifically designed for applications such as display driver and power management. This technologyoffers multiple high voltage options to support various type of panel requirement at lower leakage current (TFT, OLED, CSTN).
This technology is supported by complete standard cell library, configurable SRAM macro block, I/O and EEPROM NVM memory.
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| CL200H32
Key Process Features |
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Single poly, up to five metal layers |
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Supports 2.5V, 3.3V and 21V power supplies |
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Shallow trench isolation |
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Retrograde wells |
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Triple
gate oxide |
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Surface channel NMOS and PMOS |
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Cobalt silicided source, drain and gate |
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High density plasma gap fill |
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Medium Vt transistors (optional) |
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BN+ and MiM capacitors (optional) |
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Electrically erasable programmable elements (optional) |
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Physical Design Rule
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Electrical Design Rule (Specification)
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