CL180H32

Key Process Features: Supports 1.8V, 5.0V and 32V power supplies Single poly, up to six metal layers Shallow trench isolation Six retrograde wells Triple gate oxide Surface channel NMOS and PMOS Cobalt silicided source, drain and gate High density plasma gap fill BN+ and MiM capacitors (optional)

Key Design Rules:
 

Pitch Active 0.50µm Poly 0.43µm Metal 1 0.46µm Metal 2 - 5 0.56µm Top Metal 0.90µm

Key Performance Parameters:
 

1.8V Thin Gate 5V Thick Gate 32V HV Gate   NMOS PMOS NMOS PMOS NMOS PMOS VT 0.56V -0.61V 0.83V -0.82V 1.10V -1.10V IDsat 500µA/µm -170µA/µm 550µA/µm -255µA/µm 460µA/µm -280µA/µm RO Delay  42ps N/A N/A

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