CL180H5

Key Process Features: Supports 1.8V and 5V power supplies Single poly, up to six metal layers Shallow trench isolation Four retrograde wells Dual gate oxide Surface channel NMOS and PMOS Cobalt silicided source, drain and gate High density plasma gap fill MiM capacitor (optional)

Key Design Rules:
 

Pitch Active 0.50µm Poly 0.43µm Metal 1 0.46µm Metal 2 - 5 0.56µm Top Metal 0.90µm

Key Performance Parameters:
 

1.8V Thin Gate 5V Thick Gate   NMOS PMOS NMOS PMOS VT 0.56V -0.61V 0.83V -0.82V IDsat 500µA/µm -170µA/µm 550µA/µm 255µA/µm RO Delay  42ps N/A

Please contact us for detailed technical information.