CL200H32

Key Process Features: Supports 2.5V, 3.3V and 32V power supplies Single poly, up to six metal layers Shallow trench isolation Four retrograde wells Dual gate oxide Surface channel NMOS and PMOS Cobalt silicided source, drain and gate High density plasma gap fill Medium Vt transistors (optional) BN+ and MiM capacitors (optional) Electrically erasable programmable elements (optional)

Key Design Rules:
 

Pitch Active 0.63µm Poly 0.63µm Metal 1 0.46µm Metal 2 - 4 0.56µm Top Metal 0.90µm

Key Performance Parameters:
 

2.5V Thin Gate 3.3V Thick Gate 32V HV Gate   NMOS PMOS NMOS PMOS NMOS PMOS VT 0.72V -0.68V 0.71V -0.67V 1.1V -1.1V IDsat 450µA/µm 220µA/µm 620µA/µm 285µA/µm 490µA/µm 255µA/µm RO Delay  50ps 50ps N/A

Please contact us for detailed technical information.