CL220H21

Key Process Features: Supports 2.5V, 3.3V and 21V power supplies Single poly, up to five metal layers Shallow trench isolation Four retrograde wells Dual gate oxide Surface channel NMOS and PMOS Cobalt silicided source, drain and gate High density plasma gap fill BN+ and MiM capacitors (optional) Electrically erasable programmable elements (optional)

Key Design Rules:
 

Pitch Active 0.63µm Poly 0.63µm Metal 1 0.58µm Metal 2 - 4 0.72µm Top Metal 0.90µm

Key Performance Parameters:
 

2.5V Thin Gate 3.3V Thick Gate 21V Thick Gate   NMOS PMOS NMOS PMOS NMOS PMOS VT 0.72V -0.68V 0.71V -0.67V 1.1V -1.1V IDsat 450µA/µm 220µA/µm 620µA/µm 285µA/µm 420µA/µm 220µA/µm RO Delay  50ps 50ps N/A

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