CL130G

Key Process Features: Supports 1.2V and 2.5V or 3.3V power supplies Single poly, up to eight metal process layers Shallow trench isolation Super steep retrograde twin well Dual gate oxide Surface channel NMOS and PMOS Cobalt silicided source, drain and gate Borderless contact and vias Low K or FSG inter-metal dielectric Cu metallization for via plugs and interconnects

Key Design Rules:
 

Pitch Active 0.36µm Poly 0.31µm Metal 1 0.34µm Metal 2 - 7 0.41µm Metal 8 0.90µm

Key Performance Parameters:
 

1.2V Thin Gate 2.5V Thin Gate 3.3V Thick Gate   NMOS PMOS NMOS PMOS NMOS PMOS VT 0.34V -0.34V 0.47V -0.50V 0.72V -0.74V IDsat 535µA/µm 235µA/µm 630µA/µm 300µA/µm 600µA/µm 300µA/µm RO Delay  20ps  - 50ps

Please contact us for detailed technical information.