CL220G

Key Process Features: Supports  2.5V and 3.3V power supplies Single poly, up to five metal layers Shallow trench isolation Retrograde twin well Dual gate oxide Surface channel NMOS and PMOS Cobalt silicided source, drain and gate High density plasma gap fill

Key Design Rules:
 

Pitch Active 0.63µm Poly 0.55µm Metal 1 0.58µm Metal 2 - 4 0.72µm Top Metal  0.90µm

Key Performance Parameters:
 

2.5V Thin Gate 3.3V Thick Gate   NMOS PMOS NMOS PMOS VT 0.55V -0.55V 0.57V -0.77V IDsat 630µA/µm 290µA/µm 580µA/µm 260µA/µm RO Delay 36ps 50ps

Please contact us for detailed technical information.