SilTerra’s CL130G technology (0.13um CMOS Logic Generic) is process-matched to leading foundries. The all-copper process features borderless contacts and vias and up to eight layers of metal. This technology offers high speed and high gate density performance which is suitable for design in high speed digital consumer, wired communication and computation related applications.

Our CL130HVt technology (0.13um CMOS Logic High Vt) features optimum transistor performance between speed and standby power. This process technology targets high speed portable devices.

Both CL130G and CL130HVt technologies are supported by silicon-verified standard design libraries, SRAM compilers, I.O. Libraries and IPs.

CL130G Key Process Features

  • Industry standard 0.13µm CMOS logic technology
  • Single-poly and up to eight metal layers
  • Multiple voltages: 1.2V core, 2.5V/3.3V I/O
  • Regular Vt and Low Vt device options offered
  • Cobalt silicided source, drain and gate
  • Shallow trench isolation
  • Super steep retrograde twin well
  • Dual damascene copper metalization
  • FSG inter-metal dielectric
  • Metal-Insulator-Metal (MIM) Capacitor (Option)
  • SRAM bit cell: 2.43µm2

Physical Design Rules

Parameter Unit 1.2V Pitch 2.5V Pitch 3.3V Pitch
Active μm 0.36 0.36 0.36
Poly μm 0.31 0.53 0.55 (PMOS)
0.60 (NMOS)
Contact μm 0.34 0.34 0.34
Metal 1 μm 0.34 0.34 0.34
Via 1 μm 0.41 0.41 0.41
Metal X μm 0.41 0.41 0.41
Via X μm 0.41 0.41 0.41
Via Top μm 0.71 0.71 0.71
Metal Top μm 0.82 0.82 0.82

Electrical Design Rules

Parameter Unit 1.2V RVt 1.2V HVt 2.5V 3.3V
Vtn_lin V 0.33 0.44 0.47 0.58
Vtp_lin V 0.35 0.46 0.50 0.61
ldsn μA/μm 535 417 630 610
ldsp μA/μm 235 170 300 300
loff nA/μm <1 <0.03 <0.03 <0.05

Foundation IP

IP Name Vendor Available
Std Cell SC9 RVt ARM/Synopsys Now
Std Cell SC9 HVt ARM Now
Std Cell SC9 LVt Custom Now
Std Cell SC7 RVt ARM Now
GPIO Synopsys Now
OTP Ememory Now
Memory Compilers ARM/Synopsys Now