HIGH VOLTAGE– CL130H32

SilTerra’s CL130H32 technology ( 0.13um High Voltage) is specifically positioned to meet the requirements for display driver ICs (Ram or Ramless design) used in high resolution panel ( HVGA, WVGA, HD, QHD, FHD) requirements for smart phones, tablets and car infotainment systems.

This technology is supported by complete standard cell library, configurable SRAM macro block, I/O and OTP memory.

CL130H32 Key Process Features

  • Single-poly and up to six metal layers
  • Triple gate oxide
  • Supports 1.5V, 3.3/6V and 32V power supplies
  • Supports Regular Vt and Low Vt device option
  • Cobalt silicided source, drain and gate
  • Shallow trench isolation
  • Retrograde wells
  • Surface channel NMOS and PMOS
  • Offer symmetric and asymmetric HV transistor
  • Aluminum metallization with tungsten plug
  • Metal-Insulator-Metal (MIM) Capacitor (Option)
  • Zener diode and Schotky diode
  • High density SRAM bit cell

Physical Design Rules

Parameter Unit 1.5V Pitch 6V Pitch 32V Pitch
Active μm 0.36 0.55 6.7
Poly μm 0.31 1.03 4.3
Contact μm 0.34 0.34 0.34
Metal 1 μm 0.40 0.40 0.40
Via 1 μm 0.42 0.42 0.42
Metal X μm 0.42 0.42 0.42
Via X μm 0.42 0.42 0.42
Via Top μm 0.66 0.66 0.66
Metal Top μm 0.81 0.81 0.81

Electrical Design Rules

Parameter Unit 1.5V
LV
RVt
1.5V
LV
LVt
3.3V
MV
6.0V
MV
32V
HV
Vtn_lin V 0.565 0.47 0.75 0.80 1.1
Vtp_lin V 0.585 0.45 0.65 0.77 1.1
ldsn μA/μm 460 570 315 535 500
ldsp μA/μm 230 280 215 340 280
loff pA/μm <20 <500 <20 <19 <10
BVdss V >3.0 >3.0 >8.0 >12 >42

Foundation IP

IP Name Vendor Available
Std Cell SC9 RVt Custom Now
Std Cell SC9 LVt Custom Now
SRAM Bitcell Custom Now
GPIO Custom Now
MTP CMT Now
OTP Ememory Now
Anti Fuse OTP ChuangFeiXin Now