RFCMOS – CL130MR
SilTerra’s CL130MR (0.13um RFCMOS) is developed specifically for wireless applications in Zigbee, WLAN, Bluetooth, RF transceiver and tuners. Many RF circuits are already proven in our RFCMOS technology. This technology is supported with complete RF models and RF design kits that are silicon proven.
CL130MR Key Process Features
- Industry standard 0.13µm CMOS logic technology
- Single-poly and up to eight metal layers
- Multiple voltages: 1.2V core, 2.5V/3.3V I/O
- Regular Vt and High Vt device options offered
- Cobalt silicided source, drain and gate
- Shallow trench isolation
- Super steep retrograde twin well
- Dual damascene copper metalization
- FSG inter-metal dielectric
- Metal-Insulator-Metal (MIM) Capacitor ( 1.0, 1.5, 2.0 fF/µm2 )
- Thick metal spiral inductor
- Varactor Metal Finger Capacitor ( 1.30 fF/µm2 )
- Thick Metal Spiral Inductor ( 3.2µm )
- Ft NMOS ( 81 GHz )
Physical Design Rules
Parameter | Unit | 1.2V Pitch | 2.5V Pitch | 3.3V Pitch |
Active | μm | 0.36 | 0.36 | 0.36 |
Poly | μm | 0.31 | 0.53 | 0.55 (PMOS) 0.60 (NMOS) |
Contact | μm | 0.34 | 0.34 | 0.34 |
Metal 1 | μm | 0.34 | 0.34 | 0.34 |
Via 1 | μm | 0.41 | 0.41 | 0.41 |
Metal X | μm | 0.41 | 0.41 | 0.41 |
Via X | μm | 0.41 | 0.41 | 0.41 |
Via Top | μm | 0.71 | 0.71 | 0.71 |
Metal Top | μm | 0.82 | 0.82 | 0.82 |
Electrical Design Rules
Parameter | Unit | 1.2V RVt | 1.2V HVt | 2.5V | 3.3V |
Vtn_lin | V | 0.33 | 0.44 | 0.47 | 0.58 |
Vtp_lin | V | 0.35 | 0.46 | 0.50 | 0.61 |
ldsn | μA/μm | 535 | 417 | 630 | 610 |
ldsp | μA/μm | 235 | 170 | 300 | 300 |
loff | nA/μm | <1 | <0.03 | <0.03 | <0.05 |
Foundation IP
IP Name | Vendor | Available |
Std Cell SC9 RVt | ARM/Synopsys | Now |
Std Cell SC9 HVt | ARM | Now |
Std Cell SC9 LVt | Custom | Now |
Std Cell SC7 RVt | ARM | Now |
Memory Compilers | ARM/Sysnopsys | Now |
GPIO | Synopsys | Now |
OTP | Ememory | Now |