HIGH VOLTAGE– CL160H32
SilTerra’s CL160H32 ( 0.16um High Voltage ) technology, a high yielding technology, is specifically designed for applications such as display drivers and power management ICs. This technology offers multiple high voltage options to support various types of panel requirements at lower leakage currents.
(TFT, OLED, CSTN).
This technology is supported by complete standard cell library, SRAM bitcell, GPIO library and One-Time-Programmable IP.
CL160H32 Key Process Features
- Single-poly and up to six metal layers
- Triple gate oxide
- Supports 1.8V, 3.3/5V and 32V power supplies
- Cobalt silicided source, drain and gate
- Shallow trench isolation
- Aluminum metallization with tungsten plug
- Retrograde wells
- Surface channel NMOS and PMOS
- Aluminum metallization with tungsten plug
- Metal-Insulator-Metal (MIM) Capacitor (Option)
- Zener diode and Schotky diode
- High density SRAM bit cell
Physical Design Rules
| Parameter | Unit | 1.8V Pitch | 3.3V/5V Pitch | 32V Pitch |
| Active | μm | 0.47 | 0.55 | 6.7 |
| Poly | μm | 0.41 | 0.85 | 6.0 |
| Contact | μm | 0.425 | 0.425 | 0.425 |
| Metal 1 | μm | 0.42 | 0.42 | 0.42 |
| Via 1 | μm | 0.48 | 0.48 | 0.48 |
| Metal X | μm | 0.50 | 0.50 | 0.50 |
| Via X | μm | 0.48 | 0.48 | 0.48 |
| Via Top | μm | 0.65 | 0.65 | 0.65 |
| Metal Top | μm | 0.81 | 0.81 | 0.81 |
Electrical Design Rules
| Parameter | Unit | 1.8V LV | 3.3V MV | 5.0V MV | 32V HV |
| Vtn_lin | V | 0.56 | 0.80 | 0.83 | 1.10 |
| Vtp_lin | V | 0.62 | 0.75 | 0.80 | 1.10 |
| ldsn | μA/μm | 500 | 350 | 530 | 500 |
| ldsp | μA/μm | 167 | 175 | 265 | 280 |
| loff | pA/μm | <20 | <20 | <20 | <10 |
| BVdss | V | >3.0 | >7.0 | >8.0 | >37 |
Foundation IP
| IP Name | Vendor | Available |
| Std Cell SC9 RVt | Custom | Now |
| SRAM Bitcell | Custom | Now |
| GPIO | Custom | Now |
| OTP | Ememory | Now |
| Anti Fuse OTP | ChuangFeiXin | Now |
