HIGH VOLTAGE– CL160H32

SilTerra’s CL160H32 ( 0.16um High Voltage ) technology, a high yielding technology, is specifically designed for applications such as display drivers and power management ICs. This technology offers multiple high voltage options to support various types of panel requirements at lower leakage currents.

(TFT, OLED, CSTN).

This technology is supported by complete standard cell library, SRAM bitcell, GPIO library and One-Time-Programmable IP.

CL160H32 Key Process Features

  • Single-poly and up to six metal layers
  • Triple gate oxide
  • Supports 1.8V, 3.3/5V and 32V power supplies
  • Cobalt silicided source, drain and gate
  • Shallow trench isolation
  • Aluminum metallization with tungsten plug
  • Retrograde wells
  • Surface channel NMOS and PMOS
  • Aluminum metallization with tungsten plug
  • Metal-Insulator-Metal (MIM) Capacitor (Option)
  • Zener diode and Schotky diode
  • High density SRAM bit cell

Physical Design Rules

Parameter Unit 1.8V Pitch 3.3V/5V Pitch 32V Pitch
Active μm 0.47 0.55 6.7
Poly μm 0.41 0.85 6.0
Contact μm 0.425 0.425 0.425
Metal 1 μm 0.42 0.42 0.42
Via 1 μm 0.48 0.48 0.48
Metal X μm 0.50 0.50 0.50
Via X μm 0.48 0.48 0.48
Via Top μm 0.65 0.65 0.65
Metal Top μm 0.81 0.81 0.81

Electrical Design Rules

Parameter Unit 1.8V LV 3.3V MV 5.0V MV 32V HV
Vtn_lin V 0.56 0.80 0.83 1.10
Vtp_lin V 0.62 0.75 0.80 1.10
ldsn μA/μm 500 350 530 500
ldsp μA/μm 167 175 265 280
loff pA/μm <20 <20 <20 <10
BVdss V >3.0 >7.0 >8.0 >37

Foundation IP

IP Name Vendor Available
Std Cell SC9 RVt Custom Now
SRAM Bitcell Custom Now
GPIO Custom Now
OTP Ememory Now
Anti Fuse OTP ChuangFeiXin Now