HIGH VOLTAGE– CL180H32
SilTerra’s CL180H32 ( 0.18um High Voltage ) technology, a high yielding technology, is specifically designed for applications such as display drivers and power management ICs. This technology offers multiple high voltage options to support various types of panel requirements at lower leakage current.
(TFT, OLED, CSTN).
This technology is supported by complete standard cell library, SRAM bitcell, GPIO library and One-Time-Programmable IP.
CL180H32 Key Process Features
- Single-poly and up to six metal layers
- Triple gate oxide
- Supports 1.8V, 3.3/5V and 32V power supplies
- Cobalt silicided source, drain and gate
- Shallow trench isolation
- Aluminum metallization with tungsten plug
- Surface channel NMOS and PMOS
- Aluminum metallization with tungsten plug
- USG inter-metal dielectric
- Metal-Insulator-Metal (MIM) Capacitor (Option)
- SRAM bit cell: 3.47µm2
Physical Design Rules
| Parameter | Unit | 1.5V Pitch | 3.3V/5V Pitch | 32V Pitch |
| Active | μm | 0.50 | 0.55 | 6.7 |
| Poly | μm | 0.43 | 0.85 | 6.0 |
| Contact | μm | 0.44 | 0.44 | 0.44 |
| Metal 1 | μm | 0.46 | 0.46 | 0.46 |
| Via 1 | μm | 0.52 | 0.52 | 0.52 |
| Metal X | μm | 0.56 | 0.56 | 0.56 |
| Via X | μm | 0.52 | 0.52 | 0.52 |
| Via Top | μm | 0.71 | 0.71 | 0.71 |
| Metal Top | μm | 0.90 | 0.90 | 0.90 |
Electrical Design Rules
| Parameter | Unit | 1.8V LV | 3.3V MV | 5.0V MV | 32V HV |
| Vtn_lin | V | 0.56 | 0.80 | 0.83 | 1.10 |
| Vtp_lin | V | 0.62 | 0.75 | 0.80 | 1.10 |
| ldsn | μA/μm | 500 | 350 | 530 | 500 |
| ldsp | μA/μm | 167 | 175 | 265 | 280 |
| loff | pA/μm | <20 | <20 | <20 | <10 |
| BVdss | V | >3.0 | >7.0 | >8.0 | >37 |
Foundation IP
| IP Name | Vendor | Available |
| Std Cell SC9 RVt | Custom | Now |
| SRAM Bitcell | Custom | Now |
| GPIO | Custom | Now |
| OTP | Ememory | Now |
