SilTerra Presents Experimental Findings on Semiconductor Lifetime Prediction Modeling at NANOSYM2019
22 Aug 2018
SilTerra Presents Experimental Findings on Semiconductor Lifetime Prediction Modeling at NANOSYM2019

SilTerra’s Reliability Engineering team presented its experimental findings on lifetime prediction modeling for semiconductor devices at the 2019 NanoMITe Annual Symposium and Nanotechnology Malaysia Annual Symposium (NanoSym2019) organized by Malaysia Nanotechnology Association and the Institute of Microengineering and Nanoelectronics of Universiti Kebangsaan Malaysia in August 2019.

Authored by Faizah Abu Bakar, Lau Yew Huang and Norshahida Ismail, the paper entitled ‘Semiconductor Devices Lifetime Prediction Methodology for Hot Carrier Injection Tests’ examined two approaches, namely the global fitting and individual fitting methodologies in modeling the lifetime prediction of semiconductor NMOS devices using hot carrier injection tests. The team’s findings revealed that the individual fitting methodology demonstrated non-linear degradation across a set of stress conditions, making the prediction of lifetime at customer’s use-condition less accurate as compared to the global fitting methodology which demonstrated linear or uniform degradation, and was therefore better in terms of accuracy for the lifetime prediction of devices, especially marginal ones. For lifetime modeling, it is important that the degradation behavior be predictable or linear to enable better accuracy in lifetime prediction.

SilTerra’s Reliability Engineering department is part of the organization’s overall quality assurance system, which is based on ISO 9001,ISO 14001 IECQ QC 080000, IATF 16949 and OHSAS 18001 standards. In its aim to provide outstanding technologies and services to its customers, SilTerra places strong emphasis on remaining committed to continuously improving the quality and reliability of its processes and technologies in its fully integrated factory.