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D18V is SilTerra’s Bipolar-CMOS-DMOS (BCD) technology where the Low voltage of 1.8V device is compatible with the foundry 0.18um CMOS technology. The thick gate 5V device is optimized for high analog performance. It is built as the foundation for DMOS devices and has demonstrated meeting industry Rdson performance.
The D18V technology offers process options like MV with Deep-Nwell, MiM Capacitor, Power-Line Metal and various ESD devices, which enhance the power efficiency and reliability performance. The D18V technology is ideal for design of high performance analog devices such as wireless chargers, DC-DC converters, load switches and various Power Management IC applications. The D18V technology is supported by proven Foundry design kits and PDK.
| Parameter | Unit | 1.8V Pitch | 5.0V Pitch |
| Active | μm | 0.50 | 0.87 |
| Poly | μm | 0.43 | 0.70 (3.63V max) 0.85 (5.5V max) |
| Contact | μm | 0.47 | 0.47 |
| Metal 1 | μm | 0.46 | 0.46 |
| Via 1 | μm | 0.52 | 0.52 |
| Metal X | μm | 0.56 | 0.56 |
| Via X | μm | 0.52 | 0.52 |
| Via Top | μm | 0.71 | 0.71 |
| Metal Top | μm | 0.90 | 0.90 |
| Parameter | Unit | 1.8V Thin Gate | 5.0V Thick Gate |
| Vtn_lin | V | 0.439 | 0.791 |
| Vtp_lin | V | -0.477 | -0.752 |
| Idsn | μA/μm | 583 | 515 |
| Idsp | μA/μm | -251 | -272 |
| Ioff | |pA/μm| | <20 | <20 |
| IP Name | Vendor | Available |
| Std Cell SC9 RVT | ARM / Custom | Now |
| Std Cell SC7 RVT | ARM / Custom | Now |
| Memory Compilers | ARM / Custom | Now |
| IO Library (1.8V/5V) | Custom | Now |
| OTP | Ememory | Now |
| MTP | ACTT | Now |