C11H32 - 110nm HV 1.5V/6V/32V

HIGH VOLTAGE– CL110H32

SilTerra’s CL110H32 technology ( 0.11um High Voltage) is specifically positioned to meet the requirements for display driver ICs (Ram or Ramless design) used in high resolution panel ( HVGA, WVGA, HD, QHD, FHD) requirements for smart phones, tablets and car infotainment systems.

This technology is supported by complete standard cell library, configurable SRAM macro block, I/O and OTP memory.

CL110H32 Key Process Features

Single-poly and up to six metal layers
Triple gate oxide
Supports 1.5V, 3.3/6V and 32V power supplies
Supports Regular Vt and Low Vt device option
Cobalt silicided source, drain and gate
Shallow trench isolation
Retrograde wells
Surface channel NMOS and PMOS
Offer symmetric and asymmetric HV transistor
Aluminum metallization with tungsten plug
Metal-Insulator-Metal (MIM) Capacitor (Option)
Zener diode and Schotky diode
Ultra high density slim SRAM bit cell

Physical Design Rules

Parameter	Unit	1.5V Pitch	6V Pitch	32V Pitch
Active	μm	0.36	0.55	6.7
Poly	μm	0.31	1.03	4.3
Contact	μm	0.34	0.34	0.34
Metal 1	μm	0.40	0.40	0.40
Via 1	μm	0.42	0.42	0.42
Metal X	μm	0.42	0.42	0.42
Via X	μm	0.42	0.42	0.42
Via Top	μm	0.66	0.66	0.66
Metal Top	μm	0.81	0.81	0.81

Electrical Design Rules

Parameter	Unit	1.5V LV RVt	1.5V LV LVt	3.3V MV	6.0V MV	32V HV
Vtn_lin	V	0.565	0.47	0.75	0.80	1.1
Vtp_lin	V	0.585	0.45	0.65	0.77	1.1
ldsn	μA/μm	460	570	315	535	500
ldsp	μA/μm	230	280	215	340	280
loff	pA/μm	<20	<500	<20	<19	<10
BVdss	V	>3.0	>3.0	>8.0	>12	>42

Foundation IP

IP Name	Vendor	Available
Std Cell SC9 RVt	Custom	Now
Std Cell SC9 LVt	Custom	Now
SRAM Bitcell	Custom	Now
GPIO	Custom	Now
MTP	ACCT	Now
OTP	Ememory	Now
Anti-Fuse OTP	ChuangFeiXin	Now