SilTerra’s CL130AL technology adopts the same front end design rule as industry standard CL130G CMOS Logic technology but is integrated with aluminum backend interconnection. The CL130AL provides optimum cost over performance and virtually identical gate power consumption as compared to CL130G.

SilTerra’s CL130AL technology is supported by ARM-based standard cell libraries, One-Time-Programming IP.

CL130AL Key Process Features

  • Industry standard 0.13µm CMOS front end design
  • Single-poly and up to six metal layers
  • Dual voltages: 1.2V core, 3.3V I/O
  • Cobalt silicided source, drain and gate
  • Shallow trench isolation
  • Super steep retrograde twin well
  • Aluminum metalization
  • FSG inter-metal dielectric
  • Metal-Insulator-Metal (MIM) Capacitor (Option)
  • SRAM bit cell: 2.38µm2

Physical Design Rules

Parameter Unit 1.2V Pitch 3.3V Pitch
Active μm 0.36 0.36
Poly μm 0.31 0.55 (PMOS) 0.60 (NMOS)
Contact μm 0.34 0.34
Metal 1 μm 0.35 0.35
Via 1 μm 0.41 0.41
Metal X μm 0.41 0.41
Via X μm 0.41 0.41
Via Top μm 0.71 0.71
Metal Top μm 0.82 0.82

Electrical Design Rules

Parameter Unit 1.2V RVt 3.3V
Vtn_lin V 0.33 0.58
Vtp_lin V 0.35 0.62
ldsn μA/μm 535 608
ldsp μA/μm 235 305
loff nA/μm <2 <0.1

Foundation IP

IP NameVendorAvailable
Std Cell SC9 RVt ARM Now
Std Cell SC7 RVt ARM Now
Memory Compilers ARM Now
CUP IO (6LM only) ARM Now
OTP Ememory Now
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