C13MR – 130nm RFCMOS 1.2V/3.3V Cu

RFCMOS – CL130MR

SilTerra’s CL130MR (0.13um RFCMOS) is developed specifically for wireless applications in Zigbee, WLAN, Bluetooth, RF transceiver and tuners. Many RF circuits are already proven in our RFCMOS technology. This technology is supported with complete RF models and RF design kits that are silicon proven.

CL130MR Key Process Features

Industry standard 0.13µm CMOS logic technology
Single-poly and up to eight metal layers
Multiple voltages: 1.2V core, 2.5V/3.3V I/O
Regular Vt and High Vt device options offered
Cobalt silicided source, drain and gate
Shallow trench isolation
Super steep retrograde twin well
Dual damascene copper metalization
FSG inter-metal dielectric
Metal-Insulator-Metal (MIM) Capacitor (1.0, 1.5, 2.0 fF/µm2)
Thick metal spiral inductor
Varactor Metal Finger Capacitor (1.30 fF/µm2)
Thick Metal Spiral Inductor (3.2µm)
Ft NMOS (81 GHz)

Physical Design Rules

Parameter	Unit	1.2V Pitch	2.5V Pitch	3.3V Pitch
Active	μm	0.36	0.36	0.36
Poly	μm	0.31	0.53	0.55 (PMOS) 0.60 (NMOS)
Contact	μm	0.34	0.34	0.34
Metal 1	μm	0.34	0.34	0.34
Via 1	μm	0.41	0.41	0.41
Metal X	μm	0.41	0.41	0.41
Via X	μm	0.41	0.41	0.41
Via Top	μm	0.71	0.71	0.71
Metal Top	μm	0.82	0.82	0.82

Electrical Design Rules

Parameter	Unit	1.2V RVt	1.2V HVt	2.5V	3.3V
Vtn_lin	V	0.33	0.44	0.47	0.58
Vtp_lin	V	0.35	0.46	0.50	0.61
ldsn	μA/μm	535	417	630	610
ldsp	μA/μm	235	170	300	300
loff	nA/μm	<1	<0.03	<0.03	<0.05

Foundation IP

IP Name	Vendor	Available
Std Cell SC9 RVt	ARM/Synopsys	Now
Std Cell SC9 HVt	ARM	Now
Std Cell SC9 LVt	Custom	Now
Std Cell SC7 RVt	ARM	Now
Memory Compilers	ARM/Sysnopsys	Now
GPIO	Synopsys	Now
OTP	Ememory	Now