C16H32 – 160nm HV 1.8V/5.5V/32V

HIGH VOLTAGE– CL160H32

SilTerra’s CL160H32 ( 0.16um High Voltage ) technology, a high yielding technology, is specifically designed for applications such as display drivers and power management ICs. This technology offers multiple high voltage options to support various types of panel requirements at lower leakage currents.

(TFT, OLED, CSTN).

This technology is supported by complete standard cell library, SRAM bitcell, GPIO library and One-Time-Programmable IP.

CL160H32 Key Process Features

Single-poly and up to six metal layers
Triple gate oxide
Supports 1.8V, 3.3/5V and 32V power supplies
Cobalt silicided source, drain and gate
Shallow trench isolation
Aluminum metallization with tungsten plug
Retrograde wells
Surface channel NMOS and PMOS
Aluminum metallization with tungsten plug
Metal-Insulator-Metal (MIM) Capacitor (Option)
Zener diode and Schotky diode
High density SRAM bit cell

Physical Design Rules

Parameter	Unit	1.8V Pitch	3.3V/5V Pitch	32V Pitch
Active	μm	0.47	0.55	6.7
Poly	μm	0.41	0.85	6.0
Contact	μm	0.425	0.425	0.425
Metal 1	μm	0.42	0.42	0.42
Via 1	μm	0.48	0.48	0.48
Metal X	μm	0.50	0.50	0.50
Via X	μm	0.48	0.48	0.48
Via Top	μm	0.65	0.65	0.65
Metal Top	μm	0.81	0.81	0.81

Electrical Design Rules

Parameter	Unit	1.8V LV	3.3V MV	5.0V MV	32V HV
Vtn_lin	V	0.56	0.80	0.83	1.10
Vtp_lin	V	0.62	0.75	0.80	1.10
ldsn	μA/μm	500	350	530	500
ldsp	μA/μm	167	175	265	280
loff	pA/μm	<20	<20	<20	<10
BVdss	V	>3.0	>7.0	>8.0	>37

Foundation IP

IP Name	Vendor	Available
Std Cell SC9 RVt	Custom	Now
SRAM Bitcell	Custom	Now
GPIO	Custom	Now
OTP	Ememory	Now
Anti Fuse OTP	ChuangFeiXin	Now